MOS transistors, with characteristics such as high input resistance (100,000,000 to 1,000,000,000 ohms), low noise, low power consumption, wide dynamic range, ease of integration, absence of secondary breakdown phenomena, a broad safe operating area, and good thermal stability, have emerged as formidable competitors to bipolar transistors and power transistors.

Parametric search

If you are not familiar with the product model or need more detailed product parameters and information, you can contact online consultation